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Year 2024, Volume: 14 Issue: 1, 182 - 198, 01.03.2024
https://doi.org/10.21597/jist.1239867

Abstract

Project Number

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References

  • Ateş, A., Güzeldir, B., Sağlam, M., (2011). ZnS thin film and Zn/ZnS/n-Si/Au-Sb sandwich structure grown with SILAR method and defining the characteristic parameters. Materials Science in Semiconductor Processing, 14: 28-36.
  • Ayyildiz, E., Temirci, C., Bati, B., Türüt, A., (2001). The eOEect of series resistance on calculation of the interface state density distribution in Schottky diodes. International Journal of Electronics, 88(6): 625-633.
  • Bardeen, J., (1947). Surfaces states and rectification at a metal semi-conductor contact. Physical Review, 71(10): 717-727.
  • Barret, C. and Vapaille, A., (1976). Interfacial stats spectrum of a metal-silicon junction. Solid-State Electronics, 19(1): 73-75.
  • Bethe, H. A., (1942). Theory of the boundary layer of crystal rectifiers. Massachusetts Institute of Technology. Radiation Laboratory Report, 43-12.
  • Biber, M., Temirci, C., Türüt, A., (2002). Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process. Journal of Vacuum Science & Technology. B, 20(1): 10-13
  • Braun, F., (1874). On the current conduction through metal sulphides (in German). Annals of Physics and Chemistry, 153: 556.
  • Card, H. C., Rhoderick, E. H., (1971). Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes . Journal of Physics D: Applied Physics, 4: 1589-1601.
  • Cheung, S. K., Cheung, N. W., (1986). Extraction of Schottky diode parameters from forwarding current-voltage characteristics. Applied Physics Letters, 49(2): 85-90.
  • Daş, E., Orhan, Z., Aydoğan, Ş., Güzeldir, (2021). Fabrication and characterization of Al/n-Si/Al Schottky diode with rGO interfacial layer obtained by using spin coating method. Materials Today: Proceedings, 46, 6899-6903.
  • Davydov, B., (1939). On the contact resistance of semiconductors. Journal of Physics of the USSR, Vol.2, 167.
  • Davydov, B., (1941). Transitional resistances of semiconductors. Journal of Physics of the USSR, 4, 335.
  • Gu, Q. L., Ling, C. C., Chen, X. D., Cheng, C. K., NG, A. M. C., Beling, C. D., Fung, S., Djurišić, A. B., Lu, L. W., Brauer, G., Ong, H. C., (2007). Hydrogenperoxidetreatment inducedrectifyingbehaviorofAu/n-ZnO contact. Applied Physics Letters, 90, 122101: 1-3.
  • Imer A. G., Temirci C., Gülcan M., Sonmez M., (2014). Electrical characteristics of organic/inorganic Pt(II) complex/p-Si semiconductor contacts. Mater Sci Semicond Process, 28: 31-36.
  • Kim, S.-H., Kim, H.-K., Seong, T.-Y., (2005). Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n -type ZnO. Applied Physics Letters, 86, 112101:1-3.
  • Kocyiğit, A., Yılmaz, M., Incekara, Ü.U., Aydoğan, Ş., (2021). Molecular engineering for donor electron to enhance photodiode properties of Co/n-Si and Co/p-Si structures: The effect of hematoxylin interface. Optik (Stuttg), 242, 1-9.
  • Michaelson, H. B., (1977). The work function of the elements and its periodicity. Journal of Applied Physics, 48, 4729-4733.
  • Mohanty, S., Sayed, I., Jian, Z. A., Mishra, U. and Ahmadi, E., (2021). Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions. Applied Physics Letters, 119: 042901-1-6.
  • Mott, N. F., (1938). Note on the Contact Between A Metal and an Insulator or semiconductor. Proceedings - Cambridge Philosophical Society. 34: 568.
  • Neamen, D. A., (1992). Semiconductors Physics, and Devices, Donnelley, R. R., Sons company Sydney.
  • Rhoderick, E. H., J. Phys. D: (1972). Comments on the conduction mechanism in Schottky diodes. Journal of Physics D: Applied Physics, Vol. 5: 1920-1929.
  • Rhoderick, E. H., Williams, R. H., (1988). Metal-semiconductor Contacts. Second Ed., Oxford University Press.
  • Schifano, R., Monakhov, E. V., Grossner, U., and Svensson, B. G., (2007). Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO. Applied Physics Letters, 91: 193507: 1-3.
  • Schottky, W., (1938). Halbleitertheorie Der Sperrschicht. Naturwissenschaften, 26, 843.
  • Schottky, W., Störmer, R., and Waibel, F. Z., (1931). On the Rectifying Actions at the Surface of Contact of Copper Oxide and Applied Metallic Electrodes. Hochfrequenztech. 37: 162-167.
  • Singh, A., (1985). Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation. Solid-State Electronics, 28(3): 223-232.
  • Temirci, C., Bati, B., Sağlam, M., Türüt, A., (2001). High-barrier height Sn/p-Si Schottky diodes with interfacial layer by an anodization process. Applied Surface Science, 172: 1-7.
  • Temirci, C., Bati, B., (2011). Effect of surface passıvatıon on Capacıtance voltage characterıstıcs of Sn/p-Si Schottky contacts. International Journal of Modern Physics B., 25(4): 531-542.
  • Türüt, A., Sağlam, M., (1992). Determination of the density of Si-metal interface states and excess capacitance caused by them. Physica B: Condensed Matter. 179: 285-294.

The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters

Year 2024, Volume: 14 Issue: 1, 182 - 198, 01.03.2024
https://doi.org/10.21597/jist.1239867

Abstract

By using electrolytic hydrogen peroxide (H2O2) solution, oxidation and H-termination processes were applied to the p-Si crystal surface, which will be used for Cu/p-Si Schottky contact production, in a selective and controlled manner. Before the oxidation and H-termination processes, the p-Si(100) wafer used in this study was subjected to conventional chemical cleaning, and ohmic contact was made using pure aluminum (99.99%) metal on its back surface. The p-Si/Al with ohmic back contact was divided into three parts. A rectifying contact was immediately made to the front surface of one of them by using pure copper (99.98%) metal and called the REF (Reference) sample. The front surface of one of the remaining two p-Si/Al parts was oxidized, and the front surface of the other was H-Terminated. Rectifier contacts were made for both using pure copper (99.98%) metal and were named MIS (metal-insulator-semiconductor) and SP (surface passivated), respectively. Current-voltage (I-V) measurements of Schottky diodes of REF, MIS, and SP samples were performed at room temperature and in the dark. From the obtained data, the ideality factor (n), barrier height (Fbo), and series resistance (Rs) values of the samples were determined. As a result of the investigations, it was observed that the surface oxidation and H-Termination processes caused a decrease in the rectification factor and Fbo values of MIS and SP samples. These interesting situations were interpreted by the double-layer theory, which Bardeen predicted could exist on the surface of a semiconductor crystal and contribute to its work function.

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References

  • Ateş, A., Güzeldir, B., Sağlam, M., (2011). ZnS thin film and Zn/ZnS/n-Si/Au-Sb sandwich structure grown with SILAR method and defining the characteristic parameters. Materials Science in Semiconductor Processing, 14: 28-36.
  • Ayyildiz, E., Temirci, C., Bati, B., Türüt, A., (2001). The eOEect of series resistance on calculation of the interface state density distribution in Schottky diodes. International Journal of Electronics, 88(6): 625-633.
  • Bardeen, J., (1947). Surfaces states and rectification at a metal semi-conductor contact. Physical Review, 71(10): 717-727.
  • Barret, C. and Vapaille, A., (1976). Interfacial stats spectrum of a metal-silicon junction. Solid-State Electronics, 19(1): 73-75.
  • Bethe, H. A., (1942). Theory of the boundary layer of crystal rectifiers. Massachusetts Institute of Technology. Radiation Laboratory Report, 43-12.
  • Biber, M., Temirci, C., Türüt, A., (2002). Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process. Journal of Vacuum Science & Technology. B, 20(1): 10-13
  • Braun, F., (1874). On the current conduction through metal sulphides (in German). Annals of Physics and Chemistry, 153: 556.
  • Card, H. C., Rhoderick, E. H., (1971). Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes . Journal of Physics D: Applied Physics, 4: 1589-1601.
  • Cheung, S. K., Cheung, N. W., (1986). Extraction of Schottky diode parameters from forwarding current-voltage characteristics. Applied Physics Letters, 49(2): 85-90.
  • Daş, E., Orhan, Z., Aydoğan, Ş., Güzeldir, (2021). Fabrication and characterization of Al/n-Si/Al Schottky diode with rGO interfacial layer obtained by using spin coating method. Materials Today: Proceedings, 46, 6899-6903.
  • Davydov, B., (1939). On the contact resistance of semiconductors. Journal of Physics of the USSR, Vol.2, 167.
  • Davydov, B., (1941). Transitional resistances of semiconductors. Journal of Physics of the USSR, 4, 335.
  • Gu, Q. L., Ling, C. C., Chen, X. D., Cheng, C. K., NG, A. M. C., Beling, C. D., Fung, S., Djurišić, A. B., Lu, L. W., Brauer, G., Ong, H. C., (2007). Hydrogenperoxidetreatment inducedrectifyingbehaviorofAu/n-ZnO contact. Applied Physics Letters, 90, 122101: 1-3.
  • Imer A. G., Temirci C., Gülcan M., Sonmez M., (2014). Electrical characteristics of organic/inorganic Pt(II) complex/p-Si semiconductor contacts. Mater Sci Semicond Process, 28: 31-36.
  • Kim, S.-H., Kim, H.-K., Seong, T.-Y., (2005). Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n -type ZnO. Applied Physics Letters, 86, 112101:1-3.
  • Kocyiğit, A., Yılmaz, M., Incekara, Ü.U., Aydoğan, Ş., (2021). Molecular engineering for donor electron to enhance photodiode properties of Co/n-Si and Co/p-Si structures: The effect of hematoxylin interface. Optik (Stuttg), 242, 1-9.
  • Michaelson, H. B., (1977). The work function of the elements and its periodicity. Journal of Applied Physics, 48, 4729-4733.
  • Mohanty, S., Sayed, I., Jian, Z. A., Mishra, U. and Ahmadi, E., (2021). Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions. Applied Physics Letters, 119: 042901-1-6.
  • Mott, N. F., (1938). Note on the Contact Between A Metal and an Insulator or semiconductor. Proceedings - Cambridge Philosophical Society. 34: 568.
  • Neamen, D. A., (1992). Semiconductors Physics, and Devices, Donnelley, R. R., Sons company Sydney.
  • Rhoderick, E. H., J. Phys. D: (1972). Comments on the conduction mechanism in Schottky diodes. Journal of Physics D: Applied Physics, Vol. 5: 1920-1929.
  • Rhoderick, E. H., Williams, R. H., (1988). Metal-semiconductor Contacts. Second Ed., Oxford University Press.
  • Schifano, R., Monakhov, E. V., Grossner, U., and Svensson, B. G., (2007). Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO. Applied Physics Letters, 91: 193507: 1-3.
  • Schottky, W., (1938). Halbleitertheorie Der Sperrschicht. Naturwissenschaften, 26, 843.
  • Schottky, W., Störmer, R., and Waibel, F. Z., (1931). On the Rectifying Actions at the Surface of Contact of Copper Oxide and Applied Metallic Electrodes. Hochfrequenztech. 37: 162-167.
  • Singh, A., (1985). Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation. Solid-State Electronics, 28(3): 223-232.
  • Temirci, C., Bati, B., Sağlam, M., Türüt, A., (2001). High-barrier height Sn/p-Si Schottky diodes with interfacial layer by an anodization process. Applied Surface Science, 172: 1-7.
  • Temirci, C., Bati, B., (2011). Effect of surface passıvatıon on Capacıtance voltage characterıstıcs of Sn/p-Si Schottky contacts. International Journal of Modern Physics B., 25(4): 531-542.
  • Türüt, A., Sağlam, M., (1992). Determination of the density of Si-metal interface states and excess capacitance caused by them. Physica B: Condensed Matter. 179: 285-294.
There are 29 citations in total.

Details

Primary Language English
Subjects Metrology, Applied and Industrial Physics
Journal Section Fizik / Physics
Authors

Cabir Temirci 0000-0001-6846-052X

Qudama Ali Hussein 0000-0002-0880-1609

Reşit Özmenteş 0000-0002-5893-0660

Abuzer Yaman 0000-0003-0689-8942

Project Number --
Early Pub Date February 20, 2024
Publication Date March 1, 2024
Submission Date January 20, 2023
Acceptance Date January 8, 2024
Published in Issue Year 2024 Volume: 14 Issue: 1

Cite

APA Temirci, C., Ali Hussein, Q., Özmenteş, R., Yaman, A. (2024). The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters. Journal of the Institute of Science and Technology, 14(1), 182-198. https://doi.org/10.21597/jist.1239867
AMA Temirci C, Ali Hussein Q, Özmenteş R, Yaman A. The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters. J. Inst. Sci. and Tech. March 2024;14(1):182-198. doi:10.21597/jist.1239867
Chicago Temirci, Cabir, Qudama Ali Hussein, Reşit Özmenteş, and Abuzer Yaman. “The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/P-Si Schottky Contact Parameters”. Journal of the Institute of Science and Technology 14, no. 1 (March 2024): 182-98. https://doi.org/10.21597/jist.1239867.
EndNote Temirci C, Ali Hussein Q, Özmenteş R, Yaman A (March 1, 2024) The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters. Journal of the Institute of Science and Technology 14 1 182–198.
IEEE C. Temirci, Q. Ali Hussein, R. Özmenteş, and A. Yaman, “The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters”, J. Inst. Sci. and Tech., vol. 14, no. 1, pp. 182–198, 2024, doi: 10.21597/jist.1239867.
ISNAD Temirci, Cabir et al. “The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/P-Si Schottky Contact Parameters”. Journal of the Institute of Science and Technology 14/1 (March 2024), 182-198. https://doi.org/10.21597/jist.1239867.
JAMA Temirci C, Ali Hussein Q, Özmenteş R, Yaman A. The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters. J. Inst. Sci. and Tech. 2024;14:182–198.
MLA Temirci, Cabir et al. “The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/P-Si Schottky Contact Parameters”. Journal of the Institute of Science and Technology, vol. 14, no. 1, 2024, pp. 182-98, doi:10.21597/jist.1239867.
Vancouver Temirci C, Ali Hussein Q, Özmenteş R, Yaman A. The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters. J. Inst. Sci. and Tech. 2024;14(1):182-98.